Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion be...

ver descrição completa

Detalhes bibliográficos
Autores: Marcano, N.; Sangiao, S.; Plaza, M.; Pérez García, Lucas; Fernández Pacheco, A.; Córdoba, R.; Sánchez, M. C.; Morellón, L.; Ibarra, M. R.; De Teresa, J. M.
Tipo de documento: Artigo
Data de publicação:2010
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositório:Docta Complutense
Idioma:Inglês
OAI Identifier:oai:docta.ucm.es:20.500.14352/42776
Acesso em linha:https://hdl.handle.net/20.500.14352/42776
Nível de acesso:Acesso aberto
Palavra-chave:538.9
Transport-properties
Bismuth nanowires
Localization
Arrays
Films
Metal
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
_version_ 1878733642985897984
author Marcano, N.
author2 Sangiao, S.
Plaza, M.
Pérez García, Lucas
Fernández Pacheco, A.
Córdoba, R.
Sánchez, M. C.
Morellón, L.
Ibarra, M. R.
De Teresa, J. M.
author2_role author
author
author
author
author
author
author
author
author
author_browse Córdoba, R.
De Teresa, J. M.
Fernández Pacheco, A.
Ibarra, M. R.
Marcano, N.
Morellón, L.
Plaza, M.
Pérez García, Lucas
Sangiao, S.
Sánchez, M. C.
author_facet Marcano, N.
Sangiao, S.
Plaza, M.
Pérez García, Lucas
Fernández Pacheco, A.
Córdoba, R.
Sánchez, M. C.
Morellón, L.
Ibarra, M. R.
De Teresa, J. M.
author_role author
collection Docta Complutense
description We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.
eu_rights_str_mv openAccess
format article
id ES_5a2f74a3c9c52a2f15652aecc4040b5b
institution Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
language eng
network_acronym_str ES
network_name_str España
oai_identifier_str oai:docta.ucm.es:20.500.14352/42776
publishDate 2010
publishDateSort 2010
publisher American Institute of Physics
publisherStr American Institute of Physics
reponame_str Docta Complutense
spelling Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires Marcano, N. Sangiao, S. Plaza, M. Pérez García, Lucas Fernández Pacheco, A. Córdoba, R. Sánchez, M. C. Morellón, L. Ibarra, M. R. De Teresa, J. M. 538.9 Transport-properties Bismuth nanowires Localization Arrays Films Metal Física de materiales Física del estado sólido 2211 Física del Estado Sólido We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm. American Institute of Physics https://hdl.handle.net/20.500.14352/42776
spellingShingle Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
Marcano, N.
538.9
Transport-properties
Bismuth nanowires
Localization
Arrays
Films
Metal
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
title_full Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
title_fullStr Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
title_full_unstemmed Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
title_short Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
title_sort Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
topic 538.9
Transport-properties
Bismuth nanowires
Localization
Arrays
Films
Metal
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic_facet 538.9
Transport-properties
Bismuth nanowires
Localization
Arrays
Films
Metal
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
url https://hdl.handle.net/20.500.14352/42776