Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion be...

Full description

Authors: Marcano, N.; Sangiao, S.; Plaza, M.; Pérez García, Lucas; Fernández Pacheco, A.; Córdoba, R.; Sánchez, M. C.; Morellón, L.; Ibarra, M. R.; De Teresa, J. M.
Format: Article
Publication date:2010
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/42776
Online Access:https://hdl.handle.net/20.500.14352/42776
Access Level:Open access
Keyword:538.9
Transport-properties
Bismuth nanowires
Localization
Arrays
Films
Metal
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
Summary:We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.

Similar Items