Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion be...
| Autores: | ; ; ; ; ; ; ; ; ; |
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| Tipo de documento: | Artículo |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/42776 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/42776 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | 538.9 Transport-properties Bismuth nanowires Localization Arrays Films Metal Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm. |
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