Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR
This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is us...
| Autores: | ; ; |
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| Tipo de documento: | Artigo |
| Data de publicação: | 2004 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositório: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | Inglês |
| OAI Identifier: | oai:upcommons.upc.edu:2117/1105 |
| Acesso em linha: | https://hdl.handle.net/2117/1105 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | Noise Measurement Microwaves on-wafer noise source excess noise ratio small signal equivalent circuit model noise model calibration electric noise measurement equivalent circuits microwave field effect transistors S-parameters broadband-noise circuit model reverse-biased cold-FET noise-current sources full receiver-noise calibration noise powers 40 GHz Soroll -- Mesurament Microones Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| Resumo: | This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given. |
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