A feedforward active gate voltage control method for SiC MOSFET driving
A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed drive...
| Autores: | ; |
|---|---|
| Tipo de documento: | Artículo |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/428715 |
| Acceso en línea: | https://hdl.handle.net/2117/428715 https://dx.doi.org/10.22055/jaree.2023.39698.1045 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | Active gate driver (AGD) SiC MOSFET Switching condition Feedforward control Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
| _version_ | 1878731215337422848 |
|---|---|
| author | Ghorbani, Hamidreza|||0000-0001-9814-3277 |
| author2 | Romeral Martínez, José Luis|||0000-0001-8112-8038 |
| author2_role | author |
| author_browse | Ghorbani, Hamidreza|||0000-0001-9814-3277 Romeral Martínez, José Luis|||0000-0001-8112-8038 |
| author_facet | Ghorbani, Hamidreza|||0000-0001-9814-3277 Romeral Martínez, José Luis|||0000-0001-8112-8038 |
| author_role | author |
| collection | UPCommons. Portal del coneixement obert de la UPC |
| description | A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard switching condition and at high-frequency operation. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_2b1deec749d9fc0e6dbfe83bc5f0d6d7 |
| institution | Universitat Politècnica de Catalunya (UPC) |
| instname_str | Universitat Politècnica de Catalunya (UPC) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:upcommons.upc.edu:2117/428715 |
| publishDate | 2023 |
| publishDateSort | 2023 |
| reponame_str | UPCommons. Portal del coneixement obert de la UPC |
| spelling | A feedforward active gate voltage control method for SiC MOSFET driving Ghorbani, Hamidreza|||0000-0001-9814-3277 Romeral Martínez, José Luis|||0000-0001-8112-8038 Active gate driver (AGD) SiC MOSFET Switching condition Feedforward control Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard switching condition and at high-frequency operation. This work was supported by the Generalitat de Catalunya, grant number SGR 2017 SGR 967. Peer Reviewed https://hdl.handle.net/2117/428715 https://dx.doi.org/10.22055/jaree.2023.39698.1045 |
| spellingShingle | A feedforward active gate voltage control method for SiC MOSFET driving Ghorbani, Hamidreza|||0000-0001-9814-3277 Active gate driver (AGD) SiC MOSFET Switching condition Feedforward control Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
| title | A feedforward active gate voltage control method for SiC MOSFET driving |
| title_full | A feedforward active gate voltage control method for SiC MOSFET driving |
| title_fullStr | A feedforward active gate voltage control method for SiC MOSFET driving |
| title_full_unstemmed | A feedforward active gate voltage control method for SiC MOSFET driving |
| title_short | A feedforward active gate voltage control method for SiC MOSFET driving |
| title_sort | A feedforward active gate voltage control method for SiC MOSFET driving |
| topic | Active gate driver (AGD) SiC MOSFET Switching condition Feedforward control Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
| topic_facet | Active gate driver (AGD) SiC MOSFET Switching condition Feedforward control Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
| url | https://hdl.handle.net/2117/428715 https://dx.doi.org/10.22055/jaree.2023.39698.1045 |