A feedforward active gate voltage control method for SiC MOSFET driving
A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed drive...
| Authors: | ; |
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| Format: | Article |
| Publication date: | 2023 |
| Country: | España |
| Institution: | Universitat Politècnica de Catalunya (UPC) |
| Repository: | UPCommons. Portal del coneixement obert de la UPC |
| Language: | English |
| OAI Identifier: | oai:upcommons.upc.edu:2117/428715 |
| Online Access: | https://hdl.handle.net/2117/428715 https://dx.doi.org/10.22055/jaree.2023.39698.1045 |
| Access Level: | Open access |
| Keyword: | Active gate driver (AGD) SiC MOSFET Switching condition Feedforward control Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
| Summary: | A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard switching condition and at high-frequency operation. |
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