Electron quasienergies in a laser-driven n-type delta-doped quantum well in GaAs under an in-plane magnetic field
The availability of intense laser sources has made it possible to study a wide range of nonlinear phenomena in atoms, molecules, plasmas and solids under the action of intense electromagnetic radiation, and more recently, semiconductor nanostructures under intense electric fields, originated by an a...
| Authors: | ; ; ; |
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| Format: | Article |
| Status: | Published version |
| Publication date: | 2007 |
| Country: | México |
| Institution: | UNAM |
| Repository: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:57036163031 |
| Online Access: | https://www.redalyc.org/articulo.oa?id=57036163031 |
| Access Level: | Open access |
| Keyword: | Física, Astronomía y Matemáticas Delta laser doped quantum wells magnetic field |
| Summary: | The availability of intense laser sources has made it possible to study a wide range of nonlinear phenomena in atoms, molecules, plasmas and solids under the action of intense electromagnetic radiation, and more recently, semiconductor nanostructures under intense electric fields, originated by an applied ac voltage or a high-intensity infrared laser. On the other hand, n-type delta-doped quantum wells in GaAs provide an ideal system to study the physics at extremely high carrier densities and its potential technological applications. The problem of an electron confined in a delta-doped quantum well under the action of an in-plane magnetic field and linear polarized laser radiation is studied. The Schrodinger equation is solved in the Kramers-Henneberger approximation using an analytical expression for the quantum well ¨ potential. The dependence of the quasienergy spectra on the intensity of the incident radiation is studied. |
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