Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise induced by the diffusion of carriers through the semiconductor and the noise induced by the thermionic emission of...
| Autores: | ; ; |
|---|---|
| Tipo de documento: | Artículo |
| Estado: | Published version |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/22079 |
| Acceso en línea: | https://hdl.handle.net/2445/22079 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | Soroll Díodes Semiconductors Mètode de Montecarlo Control del soroll Microelectrònica Diodes Monte Carlo method Noise control Microelectronics |
| _version_ | 1878742506867261440 |
|---|---|
| author | Gomila Lluch, Gabriel |
| author2 | Bulashenko, Oleg Rubí Capaceti, José Miguel |
| author2_role | author author |
| author_browse | Bulashenko, Oleg Gomila Lluch, Gabriel Rubí Capaceti, José Miguel |
| author_facet | Gomila Lluch, Gabriel Bulashenko, Oleg Rubí Capaceti, José Miguel |
| author_role | author |
| collection | Recercat. Dipósit de la Recerca de Catalunya |
| description | A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise induced by the diffusion of carriers through the semiconductor and the noise induced by the thermionic emission of carriers across the metal¿semiconductor interface. Closed analytical formulas are derived for the junction resistance, series resistance, and contributions to the net noise localized in different space regions of the diode, all valid in the whole range of applied biases. An additional contribution to the voltage-noise spectral density is identified, whose origin may be traced back to the cross correlation between the voltage-noise sources associated with the junction resistance and those for the series resistance. It is argued that an inclusion of the cross-correlation term as a new element in the existing equivalent circuit models of Schottky diodes could explain the discrepancies between these models and experimental measurements or Monte Carlo simulations. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_f72d0af97eb6a0cb5c21c7de758c2a6e |
| institution | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| instname_str | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:recercat.cat:2445/22079 |
| publishDate | 1998 |
| publishDateSort | 1998 |
| publisher | American Institute of Physics |
| publisherStr | American Institute of Physics |
| reponame_str | Recercat. Dipósit de la Recerca de Catalunya |
| spelling | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory Gomila Lluch, Gabriel Bulashenko, Oleg Rubí Capaceti, José Miguel Soroll Díodes Semiconductors Mètode de Montecarlo Control del soroll Microelectrònica Diodes Monte Carlo method Noise control Microelectronics A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise induced by the diffusion of carriers through the semiconductor and the noise induced by the thermionic emission of carriers across the metal¿semiconductor interface. Closed analytical formulas are derived for the junction resistance, series resistance, and contributions to the net noise localized in different space regions of the diode, all valid in the whole range of applied biases. An additional contribution to the voltage-noise spectral density is identified, whose origin may be traced back to the cross correlation between the voltage-noise sources associated with the junction resistance and those for the series resistance. It is argued that an inclusion of the cross-correlation term as a new element in the existing equivalent circuit models of Schottky diodes could explain the discrepancies between these models and experimental measurements or Monte Carlo simulations. American Institute of Physics https://hdl.handle.net/2445/22079 |
| spellingShingle | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory Gomila Lluch, Gabriel Soroll Díodes Semiconductors Mètode de Montecarlo Control del soroll Microelectrònica Diodes Monte Carlo method Noise control Microelectronics |
| status_str | publishedVersion |
| title | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory |
| title_full | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory |
| title_fullStr | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory |
| title_full_unstemmed | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory |
| title_short | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory |
| title_sort | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory |
| topic | Soroll Díodes Semiconductors Mètode de Montecarlo Control del soroll Microelectrònica Diodes Monte Carlo method Noise control Microelectronics |
| topic_facet | Soroll Díodes Semiconductors Mètode de Montecarlo Control del soroll Microelectrònica Diodes Monte Carlo method Noise control Microelectronics |
| url | https://hdl.handle.net/2445/22079 |