Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
[EN] Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current¿voltage cycling causes transitions of conductance, which are determined by dif...
| Authors: | ; ; ; ; ; |
|---|---|
| Format: | Article |
| Publication date: | 2024 |
| Country: | España |
| Institution: | Universitat Politècnica de València (UPV) |
| Repository: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Language: | English |
| OAI Identifier: | oai:riunet.upv.es:10251/213326 |
| Online Access: | https://riunet.upv.es/handle/10251/213326 |
| Access Level: | Open access |
| Keyword: | Memristors Memory effect Conductance mechanism Halide perovskites Neuroscience-inspired computing |
| _version_ | 1878740970983391232 |
|---|---|
| author | Bou, Agustín |
| author2 | Gonzales, Cedric Vaynzof, Yana Guerrero, Antonio Boix, Pablo P.|||0000-0001-9518-7549 Bisquert, Juan|||0000-0003-4987-4887 |
| author2_role | author author author author author |
| author_browse | Bisquert, Juan|||0000-0003-4987-4887 Boix, Pablo P.|||0000-0001-9518-7549 Bou, Agustín Gonzales, Cedric Guerrero, Antonio Vaynzof, Yana |
| author_facet | Bou, Agustín Gonzales, Cedric Vaynzof, Yana Guerrero, Antonio Boix, Pablo P.|||0000-0001-9518-7549 Bisquert, Juan|||0000-0003-4987-4887 |
| author_role | author |
| collection | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| description | [EN] Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current¿voltage cycling causes transitions of conductance, which are determined by different physical mechanisms, such as the formation of conducting filaments in an insulating surrounding. Here, we provide a unified description of the set and reset processes using a conductance-activated quasi-linear memristor (CALM) model with a unique voltage-dependent relaxation time of the memory variable. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modeling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, as W/SiGe/a-Si/Ag, Si/SiO2/Ag, and SrRuO3/Cr-SrZrO3/Au memristors, capturing nuanced behaviors such as scan rate and upper vertex dependence. The model also describes the response to sequences of voltage pulses that cause synaptic potentiation effects. This model is a potent tool for comprehending and probing the dynamical response of memristors by indicating the relaxation properties that control observable responses. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_dcb7c57fa36bf7fd2fd598efd60873b2 |
| institution | Universitat Politècnica de València (UPV) |
| instname_str | Universitat Politècnica de València (UPV) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:riunet.upv.es:10251/213326 |
| publishDate | 2024 |
| publishDateSort | 2024 |
| publisher | American Chemical Society |
| publisherStr | American Chemical Society |
| reponame_str | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| spelling | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model Bou, Agustín Gonzales, Cedric Vaynzof, Yana Guerrero, Antonio Boix, Pablo P.|||0000-0001-9518-7549 Bisquert, Juan|||0000-0003-4987-4887 Memristors Memory effect Conductance mechanism Halide perovskites Neuroscience-inspired computing [EN] Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current¿voltage cycling causes transitions of conductance, which are determined by different physical mechanisms, such as the formation of conducting filaments in an insulating surrounding. Here, we provide a unified description of the set and reset processes using a conductance-activated quasi-linear memristor (CALM) model with a unique voltage-dependent relaxation time of the memory variable. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modeling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, as W/SiGe/a-Si/Ag, Si/SiO2/Ag, and SrRuO3/Cr-SrZrO3/Au memristors, capturing nuanced behaviors such as scan rate and upper vertex dependence. The model also describes the response to sequences of voltage pulses that cause synaptic potentiation effects. This model is a potent tool for comprehending and probing the dynamical response of memristors by indicating the relaxation properties that control observable responses. We thank Grant EUR2022-134045 (PEROMEM) funded by MICIU/AEI/10.13039/501100011033 and by European Union NextGenerationEU/PRTR. American Chemical Society https://riunet.upv.es/handle/10251/213326 |
| spellingShingle | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model Bou, Agustín Memristors Memory effect Conductance mechanism Halide perovskites Neuroscience-inspired computing |
| title | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model |
| title_full | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model |
| title_fullStr | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model |
| title_full_unstemmed | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model |
| title_short | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model |
| title_sort | Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model |
| topic | Memristors Memory effect Conductance mechanism Halide perovskites Neuroscience-inspired computing |
| topic_facet | Memristors Memory effect Conductance mechanism Halide perovskites Neuroscience-inspired computing |
| url | https://riunet.upv.es/handle/10251/213326 |