Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime...
| Autores: | ; ; ; ; ; ; |
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| Tipo de documento: | Artigo |
| Estado: | Accepted version |
| Data de publicação: | 2006 |
| País: | España |
| Recursos: | Universidad de Barcelona |
| Repositório: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/47300 |
| Acesso em linha: | https://hdl.handle.net/2445/47300 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | Cèl·lules solars Silici Deposició química en fase vapor Energia solar Solar cells Silicon Chemical vapor deposition Solar energy |
| Resumo: | Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated. |
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