Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime...
| Authors: | ; ; ; ; ; ; |
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| Format: | Article |
| Status: | Accepted version |
| Publication date: | 2006 |
| Country: | España |
| Institution: | Universidad de Barcelona |
| Repository: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/47300 |
| Online Access: | https://hdl.handle.net/2445/47300 |
| Access Level: | Open access |
| Keyword: | Cèl·lules solars Silici Deposició química en fase vapor Energia solar Solar cells Silicon Chemical vapor deposition Solar energy |
| _version_ | 1878739814760579072 |
|---|---|
| author | Fonrodona Turon, Marta |
| author2 | Soler Vilamitjana, David Villar, Fernando Escarré i Palou, Jordi Asensi López, José Miguel Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi |
| author2_role | author author author author author author |
| author_browse | Andreu i Batallé, Jordi Asensi López, José Miguel Bertomeu i Balagueró, Joan Escarré i Palou, Jordi Fonrodona Turon, Marta Soler Vilamitjana, David Villar, Fernando |
| author_facet | Fonrodona Turon, Marta Soler Vilamitjana, David Villar, Fernando Escarré i Palou, Jordi Asensi López, José Miguel Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi |
| author_role | author |
| collection | Dipòsit Digital de la UB |
| description | Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_c87b0a633d8caef0c48de92e2c8dc17a |
| institution | Universidad de Barcelona |
| instname_str | Universidad de Barcelona |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:diposit.ub.edu:2445/47300 |
| publishDate | 2006 |
| publishDateSort | 2006 |
| publisher | Elsevier B.V. |
| publisherStr | Elsevier B.V. |
| reponame_str | Dipòsit Digital de la UB |
| spelling | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD Fonrodona Turon, Marta Soler Vilamitjana, David Villar, Fernando Escarré i Palou, Jordi Asensi López, José Miguel Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Cèl·lules solars Silici Deposició química en fase vapor Energia solar Solar cells Silicon Chemical vapor deposition Solar energy Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated. Elsevier B.V. https://hdl.handle.net/2445/47300 |
| spellingShingle | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD Fonrodona Turon, Marta Cèl·lules solars Silici Deposició química en fase vapor Energia solar Solar cells Silicon Chemical vapor deposition Solar energy |
| status_str | acceptedVersion |
| title | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD |
| title_full | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD |
| title_fullStr | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD |
| title_full_unstemmed | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD |
| title_short | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD |
| title_sort | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD |
| topic | Cèl·lules solars Silici Deposició química en fase vapor Energia solar Solar cells Silicon Chemical vapor deposition Solar energy |
| topic_facet | Cèl·lules solars Silici Deposició química en fase vapor Energia solar Solar cells Silicon Chemical vapor deposition Solar energy |
| url | https://hdl.handle.net/2445/47300 |