Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

The increasing need for efficient memories with integrated functionalities in a single device has led the electronics community to investigate and develop different materials for resistive switching (RS) applications. Among these materials, the well-known Si nanocrystals (NCs) have demonstrated to e...

Descripción completa

Detalles Bibliográficos
Autores: López Vidrier, Julià; Frieiro Castro, Juan Luis; Blázquez Gómez, Josep Oriol; Yazicioglu, D.; Gutsch, Sebastian; González Flores, K. E.; Zacharias, Margit; Hernández Márquez, Sergi; Garrido Fernández, Blas
Tipo de documento: Artículo
Estado:Published version
Fecha de publicación:2020
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/172533
Acceso en línea:https://hdl.handle.net/2445/172533
Nivel de acceso:Acceso abierto
Palabra clave:Nanocristalls
Teoria de la commutació
Fotoelectricitat
Nanocrystals
Switching theory
Photoelectricity
_version_ 1878737042653839360
author López Vidrier, Julià
author2 Frieiro Castro, Juan Luis
Blázquez Gómez, Josep Oriol
Yazicioglu, D.
Gutsch, Sebastian
González Flores, K. E.
Zacharias, Margit
Hernández Márquez, Sergi
Garrido Fernández, Blas
author2_role author
author
author
author
author
author
author
author
author_browse Blázquez Gómez, Josep Oriol
Frieiro Castro, Juan Luis
Garrido Fernández, Blas
González Flores, K. E.
Gutsch, Sebastian
Hernández Márquez, Sergi
López Vidrier, Julià
Yazicioglu, D.
Zacharias, Margit
author_facet López Vidrier, Julià
Frieiro Castro, Juan Luis
Blázquez Gómez, Josep Oriol
Yazicioglu, D.
Gutsch, Sebastian
González Flores, K. E.
Zacharias, Margit
Hernández Márquez, Sergi
Garrido Fernández, Blas
author_role author
collection Dipòsit Digital de la UB
description The increasing need for efficient memories with integrated functionalities in a single device has led the electronics community to investigate and develop different materials for resistive switching (RS) applications. Among these materials, the well-known Si nanocrystals (NCs) have demonstrated to exhibit RS properties, which add to the wealth of phenomena that have been studied on this model material platform. In this work, we present ZnO/Si NCs/p-Si resistive switching devices whose resistance state can be electrically read at 0 V under the application of low-power monochromatic illumination. The presented effect is studied in terms of the inner structural processes and electronic physics of the device. In particular, the creation of conductive filaments through the Si NC multilayers induces a low-resistance path for photogenerated carriers to get extracted from the device, whereas in the pristine state charge extraction is strongly quenched due to the insulating nature of the NC-embedding SiO2 matrix. In addition, spectral inspection of the generated photocurrent allowed unveiling the role of Si NCs in the reported effect. Overall, the hereby shown results pave the way to obtain memories whose RS state can be read under low-power conditions.
eu_rights_str_mv openAccess
format article
id ES_99962b92cad0951ced3e82bdb94e6db3
institution Universidad de Barcelona
instname_str Universidad de Barcelona
network_acronym_str ES
network_name_str España
oai_identifier_str oai:diposit.ub.edu:2445/172533
publishDate 2020
publishDateSort 2020
publisher American Institute of Physics
publisherStr American Institute of Physics
reponame_str Dipòsit Digital de la UB
spelling Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices López Vidrier, Julià Frieiro Castro, Juan Luis Blázquez Gómez, Josep Oriol Yazicioglu, D. Gutsch, Sebastian González Flores, K. E. Zacharias, Margit Hernández Márquez, Sergi Garrido Fernández, Blas Nanocristalls Teoria de la commutació Fotoelectricitat Nanocrystals Switching theory Photoelectricity The increasing need for efficient memories with integrated functionalities in a single device has led the electronics community to investigate and develop different materials for resistive switching (RS) applications. Among these materials, the well-known Si nanocrystals (NCs) have demonstrated to exhibit RS properties, which add to the wealth of phenomena that have been studied on this model material platform. In this work, we present ZnO/Si NCs/p-Si resistive switching devices whose resistance state can be electrically read at 0 V under the application of low-power monochromatic illumination. The presented effect is studied in terms of the inner structural processes and electronic physics of the device. In particular, the creation of conductive filaments through the Si NC multilayers induces a low-resistance path for photogenerated carriers to get extracted from the device, whereas in the pristine state charge extraction is strongly quenched due to the insulating nature of the NC-embedding SiO2 matrix. In addition, spectral inspection of the generated photocurrent allowed unveiling the role of Si NCs in the reported effect. Overall, the hereby shown results pave the way to obtain memories whose RS state can be read under low-power conditions. American Institute of Physics https://hdl.handle.net/2445/172533
spellingShingle Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
López Vidrier, Julià
Nanocristalls
Teoria de la commutació
Fotoelectricitat
Nanocrystals
Switching theory
Photoelectricity
status_str publishedVersion
title Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
title_full Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
title_fullStr Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
title_full_unstemmed Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
title_short Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
title_sort Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices
topic Nanocristalls
Teoria de la commutació
Fotoelectricitat
Nanocrystals
Switching theory
Photoelectricity
topic_facet Nanocristalls
Teoria de la commutació
Fotoelectricitat
Nanocrystals
Switching theory
Photoelectricity
url https://hdl.handle.net/2445/172533