Memory kernel formalism with fractional exponents and its application to dielectric relaxation

[EN] A fractal Fokker-Planck formalism applied to the dielectric relaxation in glass forming liquids is proposed. This formalism is a modality of the generalized equation of Langevin on the use of fractional-time derivatives simultaneously with the memory function to describe the dynamics of the dip...

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Authors: Hernández, S. I.; del Castillo, L.F.; del Castillo, Roxana M.; Garcia-Bernabe, Abel|||0000-0002-9740-0830; Compañ Moreno, Vicente|||0000-0001-8233-7472
Format: Article
Publication date:2023
Country:España
Institution:Universitat Politècnica de València (UPV)
Repository:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Language:English
OAI Identifier:oai:riunet.upv.es:10251/202273
Online Access:https://riunet.upv.es/handle/10251/202273
Access Level:Open access
Keyword:Second-order memory function (SOMF)
Biphenyl-2-yl isobutyrate (OBPI)
Dielectric relaxation
Autocorrelation function
Havriliak-Negami relaxation time
MAQUINAS Y MOTORES TERMICOS
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author Hernández, S. I.
author2 del Castillo, L.F.
del Castillo, Roxana M.
Garcia-Bernabe, Abel|||0000-0002-9740-0830
Compañ Moreno, Vicente|||0000-0001-8233-7472
author2_role author
author
author
author
author_browse Compañ Moreno, Vicente|||0000-0001-8233-7472
Garcia-Bernabe, Abel|||0000-0002-9740-0830
Hernández, S. I.
del Castillo, L.F.
del Castillo, Roxana M.
author_facet Hernández, S. I.
del Castillo, L.F.
del Castillo, Roxana M.
Garcia-Bernabe, Abel|||0000-0002-9740-0830
Compañ Moreno, Vicente|||0000-0001-8233-7472
author_role author
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
description [EN] A fractal Fokker-Planck formalism applied to the dielectric relaxation in glass forming liquids is proposed. This formalism is a modality of the generalized equation of Langevin on the use of fractional-time derivatives simultaneously with the memory function to describe the dynamics of the dipolar-moment autocorrelation function. The goal is to get the description of the complex autocorrelation function numerically, and the real and imaginary parts of the second-order memory function, related to the kernel of the integral hierarchy representation of this autocorrelation function. The results exhibit the memory effect associates with alpha-dielectric relaxation mode. From the analysis, it is shown the existence of a maximum and the appropriated frequency limit in the imaginary and real parts, respectively, of the second-order memory function. That is required to describe experimental well the complex shear viscosity of the material.The theoretical model was tested with experimental data from dielectric spec-troscopy of biphenyl-2-yl isobutyrate (OBPI), a glass forming liquid, in measurements in the frequency domain from 10-2 to 106 Hz. This ester has been selected in this study for its predominant alpha-relaxation when compared to the beta relaxation. The real and imaginary parts of the second-order memory function were evaluated by means of the proposed model and the aid of the parameters of the Havriliak-Negami relationship.
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language eng
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oai_identifier_str oai:riunet.upv.es:10251/202273
publishDate 2023
publishDateSort 2023
publisher Elsevier
publisherStr Elsevier
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
spelling Memory kernel formalism with fractional exponents and its application to dielectric relaxation Hernández, S. I. del Castillo, L.F. del Castillo, Roxana M. Garcia-Bernabe, Abel|||0000-0002-9740-0830 Compañ Moreno, Vicente|||0000-0001-8233-7472 Second-order memory function (SOMF) Biphenyl-2-yl isobutyrate (OBPI) Dielectric relaxation Autocorrelation function Havriliak-Negami relaxation time MAQUINAS Y MOTORES TERMICOS [EN] A fractal Fokker-Planck formalism applied to the dielectric relaxation in glass forming liquids is proposed. This formalism is a modality of the generalized equation of Langevin on the use of fractional-time derivatives simultaneously with the memory function to describe the dynamics of the dipolar-moment autocorrelation function. The goal is to get the description of the complex autocorrelation function numerically, and the real and imaginary parts of the second-order memory function, related to the kernel of the integral hierarchy representation of this autocorrelation function. The results exhibit the memory effect associates with alpha-dielectric relaxation mode. From the analysis, it is shown the existence of a maximum and the appropriated frequency limit in the imaginary and real parts, respectively, of the second-order memory function. That is required to describe experimental well the complex shear viscosity of the material.The theoretical model was tested with experimental data from dielectric spec-troscopy of biphenyl-2-yl isobutyrate (OBPI), a glass forming liquid, in measurements in the frequency domain from 10-2 to 106 Hz. This ester has been selected in this study for its predominant alpha-relaxation when compared to the beta relaxation. The real and imaginary parts of the second-order memory function were evaluated by means of the proposed model and the aid of the parameters of the Havriliak-Negami relationship. The authors wish to state, posthumously, the excellent research carried out by Prof. Luis F. Del Castillo in the field of the memory effect associated with polymeric materials. On the other hand, we thank Professor Niels Boye Olsen and Jeppe C. Dyre from Roskilde University (Denmark) for dielectric measurements. AG -B and VC gratefully acknowledge to Ministerio de Economia y Competitividad (MINECO) , Spain for financial support by the ENE/2015-69203-R project. AG -B thanks Vicerrectorado de Investigacion de la Universitat Politecnica de Valencia, Spain for the financing of the Project (PAID -11-21) . SIH is grateful to projects UNAM-DGAPA-PAPIIT IN114721, LANCAD-UNAM-DGTIC-276 and appreciate the technical support of Alejandro de Leon Cuevas, Alejandro Avalos and Luis Alberto Aguilar Bautista from Laboratorio Nacional de Visualizacion Cientifica Avanzada (LAVIS-UNAM) , and Beatriz Marcela Millan Malo from CFATA-UNAM. RMdC is grateful to projects LANCAD-UNAM-DGTIC-385 and UNAM-DGAPA-PAPIIT IN120120. LFdC is grateful to projects UNAM- DGAPA-PAPIIT IG-100618 and IN 114818, and also thanks to Raul Reyes Ortiz and Alberto Lopez Vivas for technical assistance. Elsevier https://riunet.upv.es/handle/10251/202273
spellingShingle Memory kernel formalism with fractional exponents and its application to dielectric relaxation
Hernández, S. I.
Second-order memory function (SOMF)
Biphenyl-2-yl isobutyrate (OBPI)
Dielectric relaxation
Autocorrelation function
Havriliak-Negami relaxation time
MAQUINAS Y MOTORES TERMICOS
title Memory kernel formalism with fractional exponents and its application to dielectric relaxation
title_full Memory kernel formalism with fractional exponents and its application to dielectric relaxation
title_fullStr Memory kernel formalism with fractional exponents and its application to dielectric relaxation
title_full_unstemmed Memory kernel formalism with fractional exponents and its application to dielectric relaxation
title_short Memory kernel formalism with fractional exponents and its application to dielectric relaxation
title_sort Memory kernel formalism with fractional exponents and its application to dielectric relaxation
topic Second-order memory function (SOMF)
Biphenyl-2-yl isobutyrate (OBPI)
Dielectric relaxation
Autocorrelation function
Havriliak-Negami relaxation time
MAQUINAS Y MOTORES TERMICOS
topic_facet Second-order memory function (SOMF)
Biphenyl-2-yl isobutyrate (OBPI)
Dielectric relaxation
Autocorrelation function
Havriliak-Negami relaxation time
MAQUINAS Y MOTORES TERMICOS
url https://riunet.upv.es/handle/10251/202273