An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
The transport properties of a series of n- and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of d...
| Authors: | ; ; ; ; |
|---|---|
| Format: | Article |
| Status: | Accepted version |
| Publication date: | 2016 |
| Country: | España |
| Institution: | Universidad de Sevilla (US) |
| Repository: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/166771 |
| Online Access: | https://hdl.handle.net/11441/166771 https://doi.org/10.1016/j.nimb.2015.09.012 |
| Access Level: | Open access |
| Keyword: | Drift-diffusion model semiconductor detector Ion beam induced charge Monte Carlo method. |
| _version_ | 1878735540514193408 |
|---|---|
| author | García López, Francisco Javier |
| author2 | Jiménez Ramos, María del Carmen Rodríguez Ramos, Mauricio Forneris, Jacopo Ceballos, Joaquín |
| author2_role | author author author author |
| author_browse | Ceballos, Joaquín Forneris, Jacopo García López, Francisco Javier Jiménez Ramos, María del Carmen Rodríguez Ramos, Mauricio |
| author_facet | García López, Francisco Javier Jiménez Ramos, María del Carmen Rodríguez Ramos, Mauricio Forneris, Jacopo Ceballos, Joaquín |
| author_role | author |
| collection | idUS. Depósito de Investigación de la Universidad de Sevilla |
| description | The transport properties of a series of n- and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using an upgraded drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered as much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_7eb97074cf27084e7ddc2b0f68402df3 |
| institution | Universidad de Sevilla (US) |
| instname_str | Universidad de Sevilla (US) |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:idus.us.es:11441/166771 |
| publishDate | 2016 |
| publishDateSort | 2016 |
| publisher | Elsevier |
| publisherStr | Elsevier |
| reponame_str | idUS. Depósito de Investigación de la Universidad de Sevilla |
| spelling | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors García López, Francisco Javier Jiménez Ramos, María del Carmen Rodríguez Ramos, Mauricio Forneris, Jacopo Ceballos, Joaquín Drift-diffusion model semiconductor detector Ion beam induced charge Monte Carlo method. The transport properties of a series of n- and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using an upgraded drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered as much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations. Elsevier https://hdl.handle.net/11441/166771 https://doi.org/10.1016/j.nimb.2015.09.012 |
| spellingShingle | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors García López, Francisco Javier Drift-diffusion model semiconductor detector Ion beam induced charge Monte Carlo method. |
| status_str | acceptedVersion |
| title | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors |
| title_full | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors |
| title_fullStr | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors |
| title_full_unstemmed | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors |
| title_short | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors |
| title_sort | An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors |
| topic | Drift-diffusion model semiconductor detector Ion beam induced charge Monte Carlo method. |
| topic_facet | Drift-diffusion model semiconductor detector Ion beam induced charge Monte Carlo method. |
| url | https://hdl.handle.net/11441/166771 https://doi.org/10.1016/j.nimb.2015.09.012 |