Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films

The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28 composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic...

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Autores: Bartolomé, Pablo; Begué, A; Muñoz Noval, Álvaro; Ciria, M.; Ranchal Sánchez, Rocío
Tipo de documento: Artículo
Fecha de publicación:2020
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Lenguaje:Inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/6105
Acceso en línea:https://hdl.handle.net/20.500.14352/6105
Nivel de acceso:Acceso abierto
Palabra clave:538.9
Magnetostriction
Stress
Chemistry
Physical
Nanoscience
Nanotechnology
Materials Science
Multidisciplinary
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
_version_ 1878735021900038144
author Bartolomé, Pablo
author2 Begué, A
Muñoz Noval, Álvaro
Ciria, M.
Ranchal Sánchez, Rocío
author2_role author
author
author
author
author_browse Bartolomé, Pablo
Begué, A
Ciria, M.
Muñoz Noval, Álvaro
Ranchal Sánchez, Rocío
author_facet Bartolomé, Pablo
Begué, A
Muñoz Noval, Álvaro
Ciria, M.
Ranchal Sánchez, Rocío
author_role author
collection Docta Complutense
description The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28 composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic anisotropy could be expected, in-plane anisotropy is only present when the sample thickness is above 100 nm. By means of differential X-ray absorption spectroscopy, we have determined the influence of both Ga pairs and tetragonal cell distortion on the evolution of the magnetic anisotropy with the increase of FeGa thickness. On the other hand, we have used the cantilever beam technique with capacitive detection to also determine the evolution of the magnetoelastic parameters with the thickness increase. In this case, experimental results can be understood considering the grain distribution. Therefore, the different physical origins for anisotropy and magnetoelasticity open up the possibility to independently tune these two characteristics in Ga-rich FeGa films.
eu_rights_str_mv openAccess
format article
id ES_746d0bbc97568c2d6e015d9d54657316
institution Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
language eng
network_acronym_str ES
network_name_str España
oai_identifier_str oai:docta.ucm.es:20.500.14352/6105
publishDate 2020
publishDateSort 2020
publisher American Chemical Society
publisherStr American Chemical Society
reponame_str Docta Complutense
spelling Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films Bartolomé, Pablo Begué, A Muñoz Noval, Álvaro Ciria, M. Ranchal Sánchez, Rocío 538.9 Magnetostriction Stress Chemistry Physical Nanoscience Nanotechnology Materials Science Multidisciplinary Física de materiales Física del estado sólido 2211 Física del Estado Sólido The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28 composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic anisotropy could be expected, in-plane anisotropy is only present when the sample thickness is above 100 nm. By means of differential X-ray absorption spectroscopy, we have determined the influence of both Ga pairs and tetragonal cell distortion on the evolution of the magnetic anisotropy with the increase of FeGa thickness. On the other hand, we have used the cantilever beam technique with capacitive detection to also determine the evolution of the magnetoelastic parameters with the thickness increase. In this case, experimental results can be understood considering the grain distribution. Therefore, the different physical origins for anisotropy and magnetoelasticity open up the possibility to independently tune these two characteristics in Ga-rich FeGa films. American Chemical Society https://hdl.handle.net/20.500.14352/6105
spellingShingle Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
Bartolomé, Pablo
538.9
Magnetostriction
Stress
Chemistry
Physical
Nanoscience
Nanotechnology
Materials Science
Multidisciplinary
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
title_full Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
title_fullStr Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
title_full_unstemmed Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
title_short Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
title_sort Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
topic 538.9
Magnetostriction
Stress
Chemistry
Physical
Nanoscience
Nanotechnology
Materials Science
Multidisciplinary
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic_facet 538.9
Magnetostriction
Stress
Chemistry
Physical
Nanoscience
Nanotechnology
Materials Science
Multidisciplinary
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
url https://hdl.handle.net/20.500.14352/6105