Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the...
| Autores: | ; ; ; ; ; ; ; ; ; ; ; |
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| Tipo de documento: | Artículo |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/88773 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/88773 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | 537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica |
| _version_ | 1878734482917294080 |
|---|---|
| author | Olea Ariza, Javier |
| author2 | González Díaz, Germán Pastor Pastor, David García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián García Hernansanz, Rodrigo Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio |
| author2_role | author author author author author author author author author author author |
| author_browse | Algaidy, Sari Caudevilla Gutiérrez, Daniel Duarte Cano, Sebastián García Hemme, Eric García Hernansanz, Rodrigo González Díaz, Germán Martil De La Plaza, Ignacio Olea Ariza, Javier Pastor Pastor, David Prado Millán, Álvaro Del Pérez Zenteno, Francisco José San Andrés Serrano, Enrique |
| author_facet | Olea Ariza, Javier González Díaz, Germán Pastor Pastor, David García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián García Hernansanz, Rodrigo Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio |
| author_role | author |
| collection | Docta Complutense |
| description | In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the electronic transport properties at variable temperatures and analyzed the results. The results indicate that, for RTA samples, surface layers with a high Ti concentration have negligible conductivity due to defects. In contrast, the implantation tail region has measurable conductivity due to very high electron mobility. This region shows the activation of a very shallow donor and a deep donor level. While deep levels have been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer–Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_6ac4e22fbc3f803fa6d20b77dd5c2f2a |
| institution | Universidad Complutense de Madrid (UCM) |
| instname_str | Universidad Complutense de Madrid (UCM) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:docta.ucm.es:20.500.14352/88773 |
| publishDate | 2022 |
| publishDateSort | 2022 |
| publisher | IOP Publishing |
| publisherStr | IOP Publishing |
| reponame_str | Docta Complutense |
| spelling | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting Olea Ariza, Javier González Díaz, Germán Pastor Pastor, David García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián García Hernansanz, Rodrigo Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio 537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the electronic transport properties at variable temperatures and analyzed the results. The results indicate that, for RTA samples, surface layers with a high Ti concentration have negligible conductivity due to defects. In contrast, the implantation tail region has measurable conductivity due to very high electron mobility. This region shows the activation of a very shallow donor and a deep donor level. While deep levels have been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer–Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work. IOP Publishing https://hdl.handle.net/20.500.14352/88773 |
| spellingShingle | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting Olea Ariza, Javier 537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica |
| title | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
| title_full | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
| title_fullStr | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
| title_full_unstemmed | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
| title_short | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
| title_sort | Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
| topic | 537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica |
| topic_facet | 537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica |
| url | https://hdl.handle.net/20.500.14352/88773 |