Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors
In this paper we report on the optimization of the SiNchi:H insulator, deposited by the electron cyclotron resonance (ECR) plasma method, as a dielectric for metal-insulator-semiconductor (MIS) structures built on an InP compound semiconductor. Two different MIS structures have been obtained in whic...
| Authors: | ; ; ; ; |
|---|---|
| Format: | Article |
| Publication date: | 2002 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59103 |
| Online Access: | https://hdl.handle.net/20.500.14352/59103 |
| Access Level: | Open access |
| Keyword: | 537 Level Transient Spectroscopy Chemical-Vapor-Deposition Electrical-Properties Devices InP. Electricidad Electrónica (Física) 2202.03 Electricidad |
| _version_ | 1878733978695892992 |
|---|---|
| author | Redondo, E. |
| author2 | Martil De La Plaza, Ignacio González Díaz, Germán Fernández Sánchez, Paloma Cimas Cuevas, María Rosa |
| author2_role | author author author author |
| author_browse | Cimas Cuevas, María Rosa Fernández Sánchez, Paloma González Díaz, Germán Martil De La Plaza, Ignacio Redondo, E. |
| author_facet | Redondo, E. Martil De La Plaza, Ignacio González Díaz, Germán Fernández Sánchez, Paloma Cimas Cuevas, María Rosa |
| author_role | author |
| collection | Docta Complutense |
| description | In this paper we report on the optimization of the SiNchi:H insulator, deposited by the electron cyclotron resonance (ECR) plasma method, as a dielectric for metal-insulator-semiconductor (MIS) structures built on an InP compound semiconductor. Two different MIS structures have been obtained in which the minimum of the interface trap density (D-it,D-min) at the insulator/InP interface attains values of device quality. In the first structure, a Al/SiN1.5:H/SiN1.6:H/InP dual-layer insulator was obtained and optimized after rapid thermal annealing treatment at 500 degreesC for 30s. After this treatment, the value of D-it,D-min was 9 x 10(11) cm(-2) eV(-1). In the second structure, the MIS structure was Al/SiN1.6:H/InP single-layer insulator, in which the InP surface was exposed to an N-2 plasma prior to the SiN1.6:H film deposition. In this case, the value of D-it.min was 1.6 x 10(12) cm(-2) eV(-1). Both types of structures were used as gate insulators on N-channel enhanced-mode MIS field-effect transistor test devices. From the dc output characteristics of the transistors, we obtain values for the electron channel mobility in the range 1550-1600 cm(-2) V-1 s(-1). This is a confirmation of the great potential of the ECR plasma method as a simple way to obtain device quality gate structures on InP without the use of passivation processes of the InP surface prior to the deposition of the gate dielectric, thus simplifying the whole device fabrication procedure. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_60cd4bff86e30d2108d514b0cff86e3d |
| institution | Universidad Complutense de Madrid (UCM) |
| instname_str | Universidad Complutense de Madrid (UCM) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:docta.ucm.es:20.500.14352/59103 |
| publishDate | 2002 |
| publishDateSort | 2002 |
| publisher | Iop Publishing Ltd |
| publisherStr | Iop Publishing Ltd |
| reponame_str | Docta Complutense |
| spelling | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors Redondo, E. Martil De La Plaza, Ignacio González Díaz, Germán Fernández Sánchez, Paloma Cimas Cuevas, María Rosa 537 Level Transient Spectroscopy Chemical-Vapor-Deposition Electrical-Properties Devices InP. Electricidad Electrónica (Física) 2202.03 Electricidad In this paper we report on the optimization of the SiNchi:H insulator, deposited by the electron cyclotron resonance (ECR) plasma method, as a dielectric for metal-insulator-semiconductor (MIS) structures built on an InP compound semiconductor. Two different MIS structures have been obtained in which the minimum of the interface trap density (D-it,D-min) at the insulator/InP interface attains values of device quality. In the first structure, a Al/SiN1.5:H/SiN1.6:H/InP dual-layer insulator was obtained and optimized after rapid thermal annealing treatment at 500 degreesC for 30s. After this treatment, the value of D-it,D-min was 9 x 10(11) cm(-2) eV(-1). In the second structure, the MIS structure was Al/SiN1.6:H/InP single-layer insulator, in which the InP surface was exposed to an N-2 plasma prior to the SiN1.6:H film deposition. In this case, the value of D-it.min was 1.6 x 10(12) cm(-2) eV(-1). Both types of structures were used as gate insulators on N-channel enhanced-mode MIS field-effect transistor test devices. From the dc output characteristics of the transistors, we obtain values for the electron channel mobility in the range 1550-1600 cm(-2) V-1 s(-1). This is a confirmation of the great potential of the ECR plasma method as a simple way to obtain device quality gate structures on InP without the use of passivation processes of the InP surface prior to the deposition of the gate dielectric, thus simplifying the whole device fabrication procedure. Iop Publishing Ltd https://hdl.handle.net/20.500.14352/59103 |
| spellingShingle | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors Redondo, E. 537 Level Transient Spectroscopy Chemical-Vapor-Deposition Electrical-Properties Devices InP. Electricidad Electrónica (Física) 2202.03 Electricidad |
| title | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors |
| title_full | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors |
| title_fullStr | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors |
| title_full_unstemmed | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors |
| title_short | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors |
| title_sort | Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors |
| topic | 537 Level Transient Spectroscopy Chemical-Vapor-Deposition Electrical-Properties Devices InP. Electricidad Electrónica (Física) 2202.03 Electricidad |
| topic_facet | 537 Level Transient Spectroscopy Chemical-Vapor-Deposition Electrical-Properties Devices InP. Electricidad Electrónica (Física) 2202.03 Electricidad |
| url | https://hdl.handle.net/20.500.14352/59103 |