Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces
Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded to silicon carbide has been observed, revealing electronic properties distinct from ideal graphene. Despite extensiv...
| Autores: | ; ; |
|---|---|
| Tipo de documento: | Artigo |
| Data de publicação: | 2024 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositório: | Docta Complutense |
| Idioma: | Inglês |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/105848 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/105848 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | 544 Optoelectronic properties Electron-acceptor molecules Graphene Silicon carbide Química física (Física) 2307 Química Física |
| _version_ | 1878732291673423872 |
|---|---|
| author | Mansouri, Masoud |
| author2 | Díaz Blanco, Cristina Martín, Fernando |
| author2_role | author author |
| author_browse | Díaz Blanco, Cristina Mansouri, Masoud Martín, Fernando |
| author_facet | Mansouri, Masoud Díaz Blanco, Cristina Martín, Fernando |
| author_role | author |
| collection | Docta Complutense |
| description | Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded to silicon carbide has been observed, revealing electronic properties distinct from ideal graphene. Despite extensive experimental efforts dedicated to this interface, theoretical investigations have been confined to its ground state. Here, we use many-body perturbation theory to study the electronic and optical characteristics of this interface and demonstrate its potential for optoelectronics. By adsorbing graphene, we show that the quasiparticle band structure exhibits a reduced bandgap, associated with an optical onset in the visible energy window. Furthermore, we reveal that the absorption of two prototypical electron-accepting molecules on this substrate results in a significant renormalization of the adsorbate gap, giving rise to distinct low-lying optically excited states in the near-infrared region. These states are well-separated from the substrate’s absorption bands, ensuring wavelength selectivity for molecular optoelectronic applications. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_402c2dc9068a28b25fa62fb5a6bc51a2 |
| institution | Universidad Complutense de Madrid (UCM) |
| instname_str | Universidad Complutense de Madrid (UCM) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:docta.ucm.es:20.500.14352/105848 |
| publishDate | 2024 |
| publishDateSort | 2024 |
| reponame_str | Docta Complutense |
| spelling | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces Mansouri, Masoud Díaz Blanco, Cristina Martín, Fernando 544 Optoelectronic properties Electron-acceptor molecules Graphene Silicon carbide Química física (Física) 2307 Química Física Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded to silicon carbide has been observed, revealing electronic properties distinct from ideal graphene. Despite extensive experimental efforts dedicated to this interface, theoretical investigations have been confined to its ground state. Here, we use many-body perturbation theory to study the electronic and optical characteristics of this interface and demonstrate its potential for optoelectronics. By adsorbing graphene, we show that the quasiparticle band structure exhibits a reduced bandgap, associated with an optical onset in the visible energy window. Furthermore, we reveal that the absorption of two prototypical electron-accepting molecules on this substrate results in a significant renormalization of the adsorbate gap, giving rise to distinct low-lying optically excited states in the near-infrared region. These states are well-separated from the substrate’s absorption bands, ensuring wavelength selectivity for molecular optoelectronic applications. https://hdl.handle.net/20.500.14352/105848 |
| spellingShingle | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces Mansouri, Masoud 544 Optoelectronic properties Electron-acceptor molecules Graphene Silicon carbide Química física (Física) 2307 Química Física |
| title | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces |
| title_full | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces |
| title_fullStr | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces |
| title_full_unstemmed | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces |
| title_short | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces |
| title_sort | Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces |
| topic | 544 Optoelectronic properties Electron-acceptor molecules Graphene Silicon carbide Química física (Física) 2307 Química Física |
| topic_facet | 544 Optoelectronic properties Electron-acceptor molecules Graphene Silicon carbide Química física (Física) 2307 Química Física |
| url | https://hdl.handle.net/20.500.14352/105848 |