Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery
Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semi...
| Autores: | ; ; ; ; ; ; |
|---|---|
| Tipo de documento: | Artigo |
| Data de publicação: | 2023 |
| País: | España |
| Recursos: | Universidad Autónoma de Madrid |
| Repositório: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | Inglês |
| OAI Identifier: | oai:repositorio.uam.es:10486/707239 |
| Acesso em linha: | http://hdl.handle.net/10486/707239 https://dx.doi.org/10.1016/j.carbon.2023.04.004 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | Boron-doped diamond Damage recovery Diamond crystal Ion beam modification of materials Ion-beam irradiation Raman spectroscopy Física |
| _version_ | 1878731408889872384 |
|---|---|
| author | Jiménez Riobóo, R. J. |
| author2 | Gordillo García, Nuria de Andrés, A. Redondo Cubero, Andrés Moratalla, M. Ramos Ruiz, Miguel Ángel Ynsa Alcalá, María Dolores |
| author2_role | author author author author author author |
| author_browse | Gordillo García, Nuria Jiménez Riobóo, R. J. Moratalla, M. Ramos Ruiz, Miguel Ángel Redondo Cubero, Andrés Ynsa Alcalá, María Dolores de Andrés, A. |
| author_facet | Jiménez Riobóo, R. J. Gordillo García, Nuria de Andrés, A. Redondo Cubero, Andrés Moratalla, M. Ramos Ruiz, Miguel Ángel Ynsa Alcalá, María Dolores |
| author_role | author |
| collection | Biblos-e Archivo. Repositorio Institucional de la UAM |
| description | Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivity |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_2f015e55ed04dfab22300afdec1b50ef |
| institution | Universidad Autónoma de Madrid |
| instname_str | Universidad Autónoma de Madrid |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:repositorio.uam.es:10486/707239 |
| publishDate | 2023 |
| publishDateSort | 2023 |
| publisher | Elsevier |
| publisherStr | Elsevier |
| reponame_str | Biblos-e Archivo. Repositorio Institucional de la UAM |
| spelling | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery Jiménez Riobóo, R. J. Gordillo García, Nuria de Andrés, A. Redondo Cubero, Andrés Moratalla, M. Ramos Ruiz, Miguel Ángel Ynsa Alcalá, María Dolores Boron-doped diamond Damage recovery Diamond crystal Ion beam modification of materials Ion-beam irradiation Raman spectroscopy Física Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivity This work has been partially supported by the Ministerio de Ciencia e Innovacion ´ of Spain (Project grants PID2020-112770RB-C22/MCIN/ AEI/10.13039/501100011033, PID2021-127033OB-C21/MCIN/AEI/ 10.13039/501100011033, and PID2021-127498NB-I00/AEI/FEDER/ 10.13039/501100011033). We also acknowledge financial support from MCIN/AEI/10.13039/501100011033, through the “María de Maeztu” Programme for Units of Excellence in R&D (CEX2018-000805- M), as well as from the Autonomous Community of Madrid through program S2018/NMT-4321 (NANOMAGCOST-CM) Elsevier http://hdl.handle.net/10486/707239 https://dx.doi.org/10.1016/j.carbon.2023.04.004 |
| spellingShingle | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery Jiménez Riobóo, R. J. Boron-doped diamond Damage recovery Diamond crystal Ion beam modification of materials Ion-beam irradiation Raman spectroscopy Física |
| title | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery |
| title_full | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery |
| title_fullStr | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery |
| title_full_unstemmed | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery |
| title_short | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery |
| title_sort | Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery |
| topic | Boron-doped diamond Damage recovery Diamond crystal Ion beam modification of materials Ion-beam irradiation Raman spectroscopy Física |
| topic_facet | Boron-doped diamond Damage recovery Diamond crystal Ion beam modification of materials Ion-beam irradiation Raman spectroscopy Física |
| url | http://hdl.handle.net/10486/707239 https://dx.doi.org/10.1016/j.carbon.2023.04.004 |