A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conve...
| Autores: | ; ; ; |
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| Tipo de documento: | Artículo |
| Fecha de publicación: | 2003 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51140 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/51140 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | 537 Thin-Films Fabrication. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication. |
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