A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conve...
| Authors: | ; ; ; |
|---|---|
| Format: | Article |
| Publication date: | 2003 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51140 |
| Online Access: | https://hdl.handle.net/20.500.14352/51140 |
| Access Level: | Open access |
| Keyword: | 537 Thin-Films Fabrication. Electricidad Electrónica (Física) 2202.03 Electricidad |
| _version_ | 1878730389455896576 |
|---|---|
| author | Martil De La Plaza, Ignacio |
| author2 | González Díaz, Germán Prado Millán, Álvaro Del San Andrés Serrano, Enrique |
| author2_role | author author author |
| author_browse | González Díaz, Germán Martil De La Plaza, Ignacio Prado Millán, Álvaro Del San Andrés Serrano, Enrique |
| author_facet | Martil De La Plaza, Ignacio González Díaz, Germán Prado Millán, Álvaro Del San Andrés Serrano, Enrique |
| author_role | author |
| collection | Docta Complutense |
| description | In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_1b506a4e2d24c4e9670ea255c339d2dd |
| institution | Universidad Complutense de Madrid (UCM) |
| instname_str | Universidad Complutense de Madrid (UCM) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:docta.ucm.es:20.500.14352/51140 |
| publishDate | 2003 |
| publishDateSort | 2003 |
| publisher | Kluwer Academic Publ. |
| publisherStr | Kluwer Academic Publ. |
| reponame_str | Docta Complutense |
| spelling | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide Martil De La Plaza, Ignacio González Díaz, Germán Prado Millán, Álvaro Del San Andrés Serrano, Enrique 537 Thin-Films Fabrication. Electricidad Electrónica (Física) 2202.03 Electricidad In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication. Kluwer Academic Publ. https://hdl.handle.net/20.500.14352/51140 |
| spellingShingle | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide Martil De La Plaza, Ignacio 537 Thin-Films Fabrication. Electricidad Electrónica (Física) 2202.03 Electricidad |
| title | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
| title_full | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
| title_fullStr | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
| title_full_unstemmed | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
| title_short | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
| title_sort | A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
| topic | 537 Thin-Films Fabrication. Electricidad Electrónica (Física) 2202.03 Electricidad |
| topic_facet | 537 Thin-Films Fabrication. Electricidad Electrónica (Física) 2202.03 Electricidad |
| url | https://hdl.handle.net/20.500.14352/51140 |