Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
Absorption of amorphous-Si hydrogenated (aSi-H) solar cells can be enhanced by using dielectric nanostructures made of Si3N4 that work like antireflection coatings. The analysis focus on the short-circuit current delivered by the cell under solar irradiance, and it is made taking into account every...
| Authors: | ; ; ; |
|---|---|
| Format: | Article |
| Publication date: | 2017 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/17582 |
| Online Access: | https://hdl.handle.net/20.500.14352/17582 |
| Access Level: | Open access |
| Keyword: | 535.215 537 Resonant structures Anti-reflection coating Light trapping Solar cell Electricidad Óptica (Física) 2202.03 Electricidad 2209.19 Óptica Física |
| _version_ | 1878729801442787328 |
|---|---|
| author | Hamdy Mohamed Elshorbagy, Mahmoud |
| author2 | Abdel-Hady, Kamal Kamal, Hala Alda, Javier |
| author2_role | author author author |
| author_browse | Abdel-Hady, Kamal Alda, Javier Hamdy Mohamed Elshorbagy, Mahmoud Kamal, Hala |
| author_facet | Hamdy Mohamed Elshorbagy, Mahmoud Abdel-Hady, Kamal Kamal, Hala Alda, Javier |
| author_role | author |
| collection | Docta Complutense |
| description | Absorption of amorphous-Si hydrogenated (aSi-H) solar cells can be enhanced by using dielectric nanostructures made of Si3N4 that work like antireflection coatings. The analysis focus on the short-circuit current delivered by the cell under solar irradiance, and it is made taking into account every layer and structure of an aSi-H cell. A customized design of the antireflection coating in the form of nanostructured dielectric layers, produces a short-circuit current enhancement of 15.2% with respect to the reference flat solar cell, and a lower reflectivity of the cell. Three different geometries of linear nanostructures have been analyzed and compared with quite similar results among them. An improvement in performance has been also obtained for realizable geometrical dimensions that could be fabricated while maintaining electric conductivity of the front contact. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_0f4de4e9b341361dd67dfd127b36b0bf |
| institution | Universidad Complutense de Madrid (UCM) |
| instname_str | Universidad Complutense de Madrid (UCM) |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:docta.ucm.es:20.500.14352/17582 |
| publishDate | 2017 |
| publishDateSort | 2017 |
| publisher | Elsevier Science BV |
| publisherStr | Elsevier Science BV |
| reponame_str | Docta Complutense |
| spelling | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells Hamdy Mohamed Elshorbagy, Mahmoud Abdel-Hady, Kamal Kamal, Hala Alda, Javier 535.215 537 Resonant structures Anti-reflection coating Light trapping Solar cell Electricidad Óptica (Física) 2202.03 Electricidad 2209.19 Óptica Física Absorption of amorphous-Si hydrogenated (aSi-H) solar cells can be enhanced by using dielectric nanostructures made of Si3N4 that work like antireflection coatings. The analysis focus on the short-circuit current delivered by the cell under solar irradiance, and it is made taking into account every layer and structure of an aSi-H cell. A customized design of the antireflection coating in the form of nanostructured dielectric layers, produces a short-circuit current enhancement of 15.2% with respect to the reference flat solar cell, and a lower reflectivity of the cell. Three different geometries of linear nanostructures have been analyzed and compared with quite similar results among them. An improvement in performance has been also obtained for realizable geometrical dimensions that could be fabricated while maintaining electric conductivity of the front contact. Elsevier Science BV https://hdl.handle.net/20.500.14352/17582 |
| spellingShingle | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells Hamdy Mohamed Elshorbagy, Mahmoud 535.215 537 Resonant structures Anti-reflection coating Light trapping Solar cell Electricidad Óptica (Física) 2202.03 Electricidad 2209.19 Óptica Física |
| title | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells |
| title_full | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells |
| title_fullStr | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells |
| title_full_unstemmed | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells |
| title_short | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells |
| title_sort | Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells |
| topic | 535.215 537 Resonant structures Anti-reflection coating Light trapping Solar cell Electricidad Óptica (Física) 2202.03 Electricidad 2209.19 Óptica Física |
| topic_facet | 535.215 537 Resonant structures Anti-reflection coating Light trapping Solar cell Electricidad Óptica (Física) 2202.03 Electricidad 2209.19 Óptica Física |
| url | https://hdl.handle.net/20.500.14352/17582 |