Electronic states of on- and off-center donors in quantum rings of finite width
The electronic states of a hydrogenic donor in two-dimensional quantum rings are calculated by taking into account the finite width of the potential well in the ring. In addition, a strong magnetic field is applied perpendicular to the quantum ring. Using the effective-mass approximation at the G va...
| Authors: | ; |
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| Format: | Article |
| Publication date: | 2008 |
| Country: | España |
| Institution: | Universidad de Castilla-La Mancha |
| Repository: | RUIdeRA. Repositorio Institucional de la UCLM |
| OAI Identifier: | oai:ruidera.uclm.es:10578/41193 |
| Online Access: | https://publons.com/wos-op/publon/7354806/ https://hdl.handle.net/10578/41193 |
| Access Level: | Open access |
| Keyword: | Electronic states Impurity and defect levels Quantum rings |
| Summary: | The electronic states of a hydrogenic donor in two-dimensional quantum rings are calculated by taking into account the finite width of the potential well in the ring. In addition, a strong magnetic field is applied perpendicular to the quantum ring. Using the effective-mass approximation at the G valley, the radial Hamiltonian for the envelope-function is exactly diagonalized in the case of on-center donors. The corresponding energy levels for different angular momenta are studied as a function of the applied magnetic field. In the case of off-center donors, a perturbation approach is considered and its limitations are discussed. Finally, we calculate the absorption spectra and oscillator strength for different intraband transitions, specifically for on-center donors. |
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