Synthesis of GaN by N ion implantation in GaAs (001)
Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitat...
| Autores: | ; ; ; ; ; |
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| Tipo de documento: | Artigo |
| Estado: | Published version |
| Data de publicação: | 1995 |
| País: | Brasil |
| Recursos: | UFRGS |
| Repositório: | Repositório Institucional da UFRGS |
| Idioma: | Inglês |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/140579 |
| Acesso em linha: | http://hdl.handle.net/10183/140579 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | Física da matéria condensada Implantação de íons Microscopia ionica Crescimento epitaxial Sputtering Deposição de vapor químico Arseneto de galio |
| Resumo: | Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 331017 cm22, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. |
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