Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN par...
| Autores: | ; ; ; ; ; ; ; ; ; |
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| Tipo de documento: | Artículo |
| Estado: | Published version |
| Fecha de publicación: | 2016 |
| País: | Brasil |
| Institución: | UNESP |
| Repositorio: | Repositório Institucional da UNESP |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:repositorio.unesp.br:11449/159109 |
| Acceso en línea: | http://dx.doi.org/10.1109/TED.2016.2598288 http://hdl.handle.net/11449/159109 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | Ge pFinFET low-frequency noise (LFN) shallow trench isolation (STI) first STI last |
| Sumario: | An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation. |
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