Nanostructured Ga doped ZnO thin films prepared by Sol-Gel spin-Coating / Filmes finos de ZnO NanoestruturadoS Ga doped preparados por sol-Gel spin-Coating
ZnO nanostructures are used in device systems such as photodetectors, gas sensors,photoemission devices, UV-photosensors and many others in Optoelectronics.In the present work we studied nanocrystalline ZnO:Ga thin films prepared by the sol–gel dip-coating technique. Samples were characterized by Gr...
| Autores: | ; ; |
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| Tipo de documento: | Artigo |
| Estado: | Published version |
| Data de publicação: | 2021 |
| País: | Brasil |
| Recursos: | VERACRUZ |
| Repositório: | Revista Veras |
| Idioma: | Inglês |
| OAI Identifier: | oai:ojs2.ojs.brazilianjournals.com.br:article/40714 |
| Acesso em linha: | https://ojs.brazilianjournals.com.br/ojs/index.php/BRJD/article/view/40714 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | ZnO Ga nanocrystalline films GISAXS XR. |
| Resumo: | ZnO nanostructures are used in device systems such as photodetectors, gas sensors,photoemission devices, UV-photosensors and many others in Optoelectronics.In the present work we studied nanocrystalline ZnO:Ga thin films prepared by the sol–gel dip-coating technique. Samples were characterized by Grazing Incidence X-ray Diffraction(GIXD), X-ray Reflectivity (XR) and Grazing Incidence Small-Angle X-ray Scattering(GISAXS) methods and Field Effect Scanning Electronic Microscopy (FESEM). Characterization of the samples shows that the obtained films were uniform, continuous, with a crystallite size around 12 nm, an average pores size of around 3.5nm, and a volume fraction of nanoporosity between 0.18 and 0.3. Comparison of densities between doped and undoped films is discussed. |
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