Modeling a-Si:H p-i-n solar cells with the defect pool model
Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defec...
| Authors: | ; ; ; |
|---|---|
| Format: | Article |
| Status: | Published version |
| Publication date: | 2004 |
| Country: | Argentina |
| Institution: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repository: | CONICET Digital (CONICET) |
| Language: | English |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/27253 |
| Online Access: | http://hdl.handle.net/11336/27253 |
| Access Level: | Open access |
| Keyword: | Solar Cells Defect Pool Amorphous Silicon J-V Curves https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| _version_ | 1878403501080444929 |
|---|---|
| author | Klimovsky, E. |
| author2 | Rath, J. K. Schropp, R. E. I. Rubinelli, Francisco Alberto |
| author2_role | author author author |
| author_browse | Klimovsky, E. Rath, J. K. Rubinelli, Francisco Alberto Schropp, R. E. I. |
| author_facet | Klimovsky, E. Rath, J. K. Schropp, R. E. I. Rubinelli, Francisco Alberto |
| author_role | author |
| collection | CONICET Digital (CONICET) |
| description | Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defect pool model (DPM). Fittings within the DPM were achieved using the algorithms proposed by Powell and Deane and Schumm. One Si–H bond mediating in the creation of dangling bonds in the first expressions proposed by Powell and Deane and Schumm are appropriate for modeling solar cells in the initial state. The applicability of the algorithm proposed by Schumm for a-Si:H in the stabilized state is also discussed in solar cells. Using DPM we have explored the optimum doping and band gap profile in the intrinsic layer leading us to the maximum efficiency of a-Si:H p–i–n cells. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | AR_8a4890d541cbd300ddfc8ce3dada69df |
| identifier_str_mv | Klimovsky, E.; Rath, J. K.; Schropp, R. E. I.; Rubinelli, Francisco Alberto; Modeling a-Si:H p-i-n solar cells with the defect pool model; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 6-2004; 686-689 0022-3093 CONICET Digital CONICET |
| institution | Consejo Nacional de Investigaciones Científicas y Técnicas |
| instname_str | Consejo Nacional de Investigaciones Científicas y Técnicas |
| language | eng |
| network_acronym_str | AR |
| network_name_str | Argentina |
| oai_identifier_str | oai:ri.conicet.gov.ar:11336/27253 |
| publishDate | 2004 |
| publishDateSort | 2004 |
| publisher | Elsevier Science |
| publisherStr | Elsevier Science |
| reponame_str | CONICET Digital (CONICET) |
| spelling | Modeling a-Si:H p-i-n solar cells with the defect pool model Klimovsky, E. Rath, J. K. Schropp, R. E. I. Rubinelli, Francisco Alberto Solar Cells Defect Pool Amorphous Silicon J-V Curves https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defect pool model (DPM). Fittings within the DPM were achieved using the algorithms proposed by Powell and Deane and Schumm. One Si–H bond mediating in the creation of dangling bonds in the first expressions proposed by Powell and Deane and Schumm are appropriate for modeling solar cells in the initial state. The applicability of the algorithm proposed by Schumm for a-Si:H in the stabilized state is also discussed in solar cells. Using DPM we have explored the optimum doping and band gap profile in the intrinsic layer leading us to the maximum efficiency of a-Si:H p–i–n cells. Fil: Klimovsky, E.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Rath, J. K.. Utrecht University; Países Bajos Fil: Schropp, R. E. I.. Utrecht University; Países Bajos Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Elsevier Science http://hdl.handle.net/11336/27253 Klimovsky, E.; Rath, J. K.; Schropp, R. E. I.; Rubinelli, Francisco Alberto; Modeling a-Si:H p-i-n solar cells with the defect pool model; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 6-2004; 686-689 0022-3093 CONICET Digital CONICET |
| spellingShingle | Modeling a-Si:H p-i-n solar cells with the defect pool model Klimovsky, E. Solar Cells Defect Pool Amorphous Silicon J-V Curves https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| status_str | publishedVersion |
| title | Modeling a-Si:H p-i-n solar cells with the defect pool model |
| title_full | Modeling a-Si:H p-i-n solar cells with the defect pool model |
| title_fullStr | Modeling a-Si:H p-i-n solar cells with the defect pool model |
| title_full_unstemmed | Modeling a-Si:H p-i-n solar cells with the defect pool model |
| title_short | Modeling a-Si:H p-i-n solar cells with the defect pool model |
| title_sort | Modeling a-Si:H p-i-n solar cells with the defect pool model |
| topic | Solar Cells Defect Pool Amorphous Silicon J-V Curves https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| topic_facet | Solar Cells Defect Pool Amorphous Silicon J-V Curves https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| url | http://hdl.handle.net/11336/27253 |