Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS het...
| Autores: | ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; |
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| Tipo de documento: | Artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:ddd.uab.cat:236028 |
| Acceso en línea: | https://ddd.uab.cat/record/236028 https://dx.doi.org/urn:doi:10.1021/acsami.9b15034 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | Quantum computing Proximity effects MBE Hybrid materials Magnetic proximity Exchange field Band alignment |
| _version_ | 1878740816035315712 |
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| author | Liu, Yu|||0000-0001-7313-6740 |
| author2 | Luchini, Alessandra|||0000-0003-2380-6069 Martí-Sánchez, Sara|||0000-0003-4283-1489 Koch, Christian Schuwalow, Sergej Khan, Sabbir A.|||0000-0003-1279-7638 Stankevič, Tomas Francoual, Sonia Mardegan, Jose R. L. Krieger, Jonas A. Strocov, Vladimir N. Stahn, Jochen Vaz, Carlos A. F.|||0000-0002-6209-8918 Ramakrishnan, Mahesh Staub, Urs Lefmann, Kim Aeppli, Gabriel Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Krogstrup, Peter|||0000-0002-1930-8553 |
| author2_role | author author author author author author author author author author author author author author author author author author |
| author_browse | Aeppli, Gabriel Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Francoual, Sonia Khan, Sabbir A.|||0000-0003-1279-7638 Koch, Christian Krieger, Jonas A. Krogstrup, Peter|||0000-0002-1930-8553 Lefmann, Kim Liu, Yu|||0000-0001-7313-6740 Luchini, Alessandra|||0000-0003-2380-6069 Mardegan, Jose R. L. Martí-Sánchez, Sara|||0000-0003-4283-1489 Ramakrishnan, Mahesh Schuwalow, Sergej Stahn, Jochen Stankevič, Tomas Staub, Urs Strocov, Vladimir N. Vaz, Carlos A. F.|||0000-0002-6209-8918 |
| author_facet | Liu, Yu|||0000-0001-7313-6740 Luchini, Alessandra|||0000-0003-2380-6069 Martí-Sánchez, Sara|||0000-0003-4283-1489 Koch, Christian Schuwalow, Sergej Khan, Sabbir A.|||0000-0003-1279-7638 Stankevič, Tomas Francoual, Sonia Mardegan, Jose R. L. Krieger, Jonas A. Strocov, Vladimir N. Stahn, Jochen Vaz, Carlos A. F.|||0000-0002-6209-8918 Ramakrishnan, Mahesh Staub, Urs Lefmann, Kim Aeppli, Gabriel Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Krogstrup, Peter|||0000-0002-1930-8553 |
| author_role | author |
| collection | Dipòsit Digital de Documents de la UAB |
| description | Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | ES_d9e7528bea331efee24b0d00aefded26 |
| institution | Universitat Autònoma de Barcelona |
| instname_str | Universitat Autònoma de Barcelona |
| language | eng |
| network_acronym_str | ES |
| network_name_str | España |
| oai_identifier_str | oai:ddd.uab.cat:236028 |
| publishDate | 2020 |
| publishDateSort | 2020 |
| reponame_str | Dipòsit Digital de Documents de la UAB |
| spelling | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces band alignment and magnetic structure Liu, Yu|||0000-0001-7313-6740 Luchini, Alessandra|||0000-0003-2380-6069 Martí-Sánchez, Sara|||0000-0003-4283-1489 Koch, Christian Schuwalow, Sergej Khan, Sabbir A.|||0000-0003-1279-7638 Stankevič, Tomas Francoual, Sonia Mardegan, Jose R. L. Krieger, Jonas A. Strocov, Vladimir N. Stahn, Jochen Vaz, Carlos A. F.|||0000-0002-6209-8918 Ramakrishnan, Mahesh Staub, Urs Lefmann, Kim Aeppli, Gabriel Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Krogstrup, Peter|||0000-0002-1930-8553 Quantum computing Proximity effects MBE Hybrid materials Magnetic proximity Exchange field Band alignment Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields. https://ddd.uab.cat/record/236028 https://dx.doi.org/urn:doi:10.1021/acsami.9b15034 |
| spellingShingle | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces Liu, Yu|||0000-0001-7313-6740 Quantum computing Proximity effects MBE Hybrid materials Magnetic proximity Exchange field Band alignment |
| title | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces |
| title_full | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces |
| title_fullStr | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces |
| title_full_unstemmed | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces |
| title_short | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces |
| title_sort | Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces |
| topic | Quantum computing Proximity effects MBE Hybrid materials Magnetic proximity Exchange field Band alignment |
| topic_facet | Quantum computing Proximity effects MBE Hybrid materials Magnetic proximity Exchange field Band alignment |
| url | https://ddd.uab.cat/record/236028 https://dx.doi.org/urn:doi:10.1021/acsami.9b15034 |