Different Modular Techniques Applied in a Synchronous Boost Converter with SiC MOSFETs to Obtain High Efficiency at Light Load and Low Current Ripple

This paper is focused on a high-voltage (400 to 800 V) bidirectional converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel converter, providing distributed energy-storage capability to a solid-state transformer....

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Detalhes bibliográficos
Autores: Vázquez Ardura, Aitor|||0000-0003-3343-4772; Rodríguez Alonso, Alberto|||0000-0002-6541-4509; Rodríguez Rogina, María|||0000-0002-3692-9781; González Lamar, Diego|||0000-0002-1208-0250
Tipo de documento: Artigo
Data de publicação:2017
País:España
Recursos:Universidad de Oviedo (UNIOVI)
Repositório:RUO. Repositorio Institucional de la Universidad de Oviedo
Idioma:Inglês
OAI Identifier:oai:digibuo.uniovi.es:10651/45536
Acesso em linha:http://hdl.handle.net/10651/45536
https://dx.doi.org/10.1109/TIE.2017.2711521
Nível de acesso:Acesso aberto
Palavra-chave:Dc/dc bidirectional converters
Light load
Descrição
Resumo:This paper is focused on a high-voltage (400 to 800 V) bidirectional converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel converter, providing distributed energy-storage capability to a solid-state transformer. This converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a synchronous boost converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel-output-parallel synchronous boost converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques