Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers
Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ...
| Autores: | ; ; |
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| Tipo de documento: | Artigo |
| Estado: | Published version |
| Data de publicação: | 1992 |
| País: | España |
| Recursos: | Universidad de Barcelona |
| Repositório: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/9848 |
| Acesso em linha: | https://hdl.handle.net/2445/9848 |
| Nível de acesso: | Acesso aberto |
| Palavra-chave: | Electrònica de l'estat sòlid Propietats òptiques Luminescència Semiconductors Microscòpia electrònica de transmissió Solid state electronics Optical properties Transmission electron microscopy Photoluminescence |
| Resumo: | Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field. |
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