Lattice site investigation of F in preamorphized Si
The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 750 °C for 60 min. The 19F (p, α ƴ)16 resonant nuclear reactio...
| Autores: | ; ; ; |
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| Tipo de documento: | Artículo |
| Estado: | Published version |
| Fecha de publicación: | 2007 |
| País: | Brasil |
| Institución: | UFRGS |
| Repositorio: | Repositório Institucional da UFRGS |
| Lenguaje: | Inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/109084 |
| Acceso en línea: | http://hdl.handle.net/10183/109084 |
| Nivel de acceso: | Acceso abierto |
| Palabra clave: | Silício Amorfizacao Cristais |
| Sumario: | The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 750 °C for 60 min. The 19F (p, α ƴ)16 resonant nuclear reaction at 340.5 keV was employed to measure the probability of a close encounter between protons and F nuclei as a function of the incident angle with respect to six major crystalline directions. The predictions of several ab initio calculations proved to be incompatible with the present experimental findings. |
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