Search Results - Simoen, E.

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  1. 1

    Negative bias temperature instabilities induced in device with millisecond anneal for ultra-shallow junctions

    Article | by Moras Albero, Miquel|||0000-0003-3397-2730; Martin Martinez, Javier|||0000-0001-5938-5898; Rodríguez Martínez, Rosana|||0000-0002-4565-6703; Nafria, Montserrat|||0000-0002-9549-2890; Aymerich Humet, Xavier|||0000-0002-5874-6257; Simoen, E. | Published 2014 |
    Other Authors: “…Simoen, E.…”
  2. 2

    Channel-Hot-Carrier degradation of strained MOSFETs

    Article | by Wu, Qian; Porti i Pujal, Marc|||0000-0001-7438-3823; Bayerl, Albin; Martin Martinez, Javier|||0000-0001-5938-5898; Rodríguez Martínez, Rosana|||0000-0002-4565-6703; Nafria, Montserrat|||0000-0002-9549-2890; Aymerich Humet, Xavier|||0000-0002-5874-6257; Simoen, E. | Published 2015 |
    Other Authors: “…Simoen, E.…”
  3. 3

    Lateral PIN Photodiode with Germanium and Silicon Layer on SOI Wafers

    Article | by Silva, Fábio A. [UNESP]; Doria, Rodrigo T.; Simoen, E.; Andrade, M. G.C. [UNESP] | Published 2023 |
    Other Authors: “…Simoen, E.…”
  4. 4

    Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications

    Article | by Silva, V. C.P. [UNESP]; Martino, J. A.; Simoen, E.; Veloso, A.; Agopian, P. G.D. [UNESP] | Published 2023 |
    Other Authors: “…Simoen, E.…”
  5. 5

    Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

    Article | by Oliveira, A. V.; Simoen, E.; Agopian, P. G.D. [UNESP]; Martino, J. A.; Mitard, J.; Witters, L.; Langer, R.; Collaert, N.; Thean, A.; Claeys, C. | Published 2016 |
    Other Authors: “…Simoen, E.…”
  6. 6

    Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOSFET down to-100oC

    Article | by Silva, Vanessa C. P.; Leal, Joao V. C.; Perina, Welder F.; Martino, Joao A.; Simoen, E.; Veloso, A.; Agopian, Paula G. D. [UNESP] | Published 2022 |
    Other Authors: “…Simoen, E.…”
  7. 7

    Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

    Article | by Martino, M. D.V.; Martino, J. A.; Agopian, P. G.D. [UNESP]; Rooyackers, R.; Simoen, E.; Collaert, N.; Claeys, C. | Published 2018 |
    Other Authors: “…Simoen, E.…”
  8. 8

    Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

    Article | by Agopian, P. G.D. [UNESP]; Torres, H. L.F.; Martino, J. A.; Rooyackers, R.; Simoen, E.; Claeys, C.; Collaert, N. | Published 2019 |
    Other Authors: “…Simoen, E.…”
  9. 9

    Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C

    Article | by Agopian, P. G.D. [UNESP]; Carmo, G. J. [UNESP]; Martino, J. A.; Simoen, E.; Peralagu, U.; Parvais, B.; Waldron, N.; Collaert, N. | Published 2021 |
    Other Authors: “…Simoen, E.…”
  10. 10

    Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

    Article | by Martino, M. D.V.; Martino, J. A.; Agopian, P. G.D. [UNESP]; Vandooren, A.; Rooyackers, R.; Simoen, E.; Claeys, C. | Published 2017 |
    Other Authors: “…Simoen, E.…”

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